Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

Sang-Kee Si; Sung-June Kim; Ju-Han Lee; Deok Ho Yeo; Kyung-Hun Yoon

doi:10.1117/12.304469

8 April 1998 Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO₂ capping and its application to photodetectors

Sang-Kee Si, Sung-June Kim, Ju-Han Lee, Deok Ho Yeo, Kyung-Hun Yoon

Author Affiliations +

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304469
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

In this paper, we have investigated the bandgap tuning in the InGaAs InP multiquantum well structure obtained by impurity-free vacancy diffusion using low temperature photoluminescence (PL). The MQW intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, SiO₂ and SiN_x. The SiO₂ capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750 degrees C and 850 degrees C, respectively, with its value controllable using annealing time and temperature. Samples with SiO₂-InP or SiN_x- InGaAs cap layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the same samples confirmed the energy shifts obtained using PL. The process development can be readily applied to fabrication of photodetectors that are sensitive to wavelength and/or polarization.

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Sang-Kee Si, Sung-June Kim, Ju-Han Lee, Deok Ho Yeo, and Kyung-Hun Yoon "Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO₂ capping and its application to photodetectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304469

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