The Bi/Bi1-xSbx multiquantum well structure

Xinjian Yi; Xinyu Zhang; Yi Li; Jianhua Hao; Xing-Rong Zhao

doi:10.1117/12.304472

8 April 1998 The Bi/Bi_1-xSb_x multiquantum well structure

Xinjian Yi, Xinyu Zhang, Yi Li, Jianhua Hao, Xing-Rong Zhao

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304472
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Bi/Bi_1-xSb_x multiquantum well structure has been grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with a buffer layer of CdTe (111). The GaAs substrate was preheated at a temperature of 580 degrees C in the MBE chamber with vacuum of 10⁺¹⁰ torr for 10 minutes. The CdTe (111) buffer layer was grown with thickness of 300 nm at temperature of 280 degrees C. The Bi/Bi_1-xSb_x multilayer structure with x of 0.15, repeated 40 times, was grown at substrate temperature of 130 degrees C. As- deposited samples were characterized by reflection high- energy electron diffraction, x-ray diffraction analysis and high-resolution transmission electron microscopy (TEM), indicating a good epitaxial layer quality. The energy band model of the samples have been suggested for the first time.

Citation Download Citation

Xinjian Yi, Xinyu Zhang, Yi Li, Jianhua Hao, and Xing-Rong Zhao "The Bi/Bi_1-xSb_x multiquantum well structure", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304472

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