Characterization of a next-generation step-and-scan system

Timothy J. Wiltshire; Joseph P. Kirk; Donald C. Wheeler; Christopher Obszarny; James T. Marsh; Donald M. Odiwo

doi:10.1117/12.310773

29 June 1998 Characterization of a next-generation step-and-scan system

Timothy J. Wiltshire, Joseph P. Kirk, Donald C. Wheeler, Christopher Obszarny, James T. Marsh, Donald M. Odiwo

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310773
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Deep-ultaviolet (DUV) step-and-scan projection systems have been increasing in semiconductor manufacturing importance in recent years. IBM and other semiconductor manufacturers have made substantial use of 0.50 numerical aperture (NA) step-and- scan systems for production resolutions down to approximately 250 nm resolution. This paper describes the initial system characterization and product performance of a next generation, 0.60 NA scanner system in early semiconductor production.

Citation Download Citation

Timothy J. Wiltshire, Joseph P. Kirk, Donald C. Wheeler, Christopher Obszarny, James T. Marsh, and Donald M. Odiwo "Characterization of a next-generation step-and-scan system", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310773

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