Advanced polysilicon TFT technology for active matrix organic light-emitting diode displays

Miltiadis K. Hatalis; Mark J. Stewart; Robert S. Howell

doi:10.1117/12.321781

14 September 1998 Advanced polysilicon TFT technology for active matrix organic light-emitting diode displays

Miltiadis K. Hatalis, Mark J. Stewart, Robert S. Howell

Proceedings Volume 3363, Cockpit Displays V: Displays for Defense Applications; (1998) https://doi.org/10.1117/12.321781
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

This work discusses the features of a low temperature polysilicon thin film transistor (TFT) technology suitable for application in the new Active Matrix Organic Light Emitting Diode (AMOLED) displays. The most important facet of this work is the preparation of polysilicon films by the method of solid phase crystallization of amorphous silicon films using rapid thermal processing (RTP). It is shown that amorphous silicon films can be crystallized by RTP at temperatures compatible with glass substrates yielding polysilicon TFT performance suitable for AMOLED. The use of transition metals for achieving aluminum lines with no hillock and low contact resistance to indium tin oxide, two important features for AMOLED displays is discussed.

Citation Download Citation

Miltiadis K. Hatalis, Mark J. Stewart, and Robert S. Howell "Advanced polysilicon TFT technology for active matrix organic light-emitting diode displays", Proc. SPIE 3363, Cockpit Displays V: Displays for Defense Applications, (14 September 1998); https://doi.org/10.1117/12.321781

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