CW-laser-induced spherulitic recrystallization in Sb-Se thin layer system

N. Starbov; V. Mankov; K. Starbova; Konstantin Kolev; Alain Jadin; Lucien Diego Laude

doi:10.1117/12.308618

26 May 1998 CW-laser-induced spherulitic recrystallization in Sb-Se thin layer system

N. Starbov, V. Mankov, K. Starbova, Konstantin Kolev, Alain Jadin, Lucien Diego Laude

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308618
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Thin layers of polycrystalline antimony and amorphous selenium are successively deposited onto a glass substrate. Under specific CW Ar⁺ laser irradiation conditions in these Sb/Se bilayered films, optical microscopy evidence for a spherulytic crystal growth is obtained. Phase forming is characterized by low angle X-ray diffraction, reflection high energy electron diffraction, energy dispersive X-ray analyses, and Auger spectroscopy. It is shown that, though depending on the laser irradiation conditions, the final spherulytic growth in the irradiated Sb-Se films stems from the Sb-innermost layer crystallization process. Spectacular trans-crystallization takes place through the film during laser treatment of the bilayer. An attempts at modeling this CW-laser induced recrystallization is proposed.

Citation Download Citation

N. Starbov, V. Mankov, K. Starbova, Konstantin Kolev, Alain Jadin, and Lucien Diego Laude "CW-laser-induced spherulitic recrystallization in Sb-Se thin layer system", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308618

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