Visible photoluminescence from F-doped nanocrystallites of silicon films prepared by laser chemical vapor deposition

A. E. Dar'yushkin; S. B. Korovin; Vladimir I. Pustovoy

doi:10.1117/12.308647

26 May 1998 Visible photoluminescence from F-doped nanocrystallites of silicon films prepared by laser chemical vapor deposition

A. E. Dar'yushkin, S. B. Korovin, Vladimir I. Pustovoy

Author Affiliations +

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308647
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

We have observed visible photoluminescence (PL) from F-doped silicon nanocrystallites films prepared in the chemical vapor deposition system. The PL spectra are in the range of 500 - 800 nm with the luminescence peak localized near 540 nm. High energy shift of the luminescence peak is discussed in terms of material structural characteristics, and a tentative explanation of light emission mechanism is proposed.

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A. E. Dar'yushkin, S. B. Korovin, and Vladimir I. Pustovoy "Visible photoluminescence from F-doped nanocrystallites of silicon films prepared by laser chemical vapor deposition", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308647

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