Spectroellipsometric study of SiC/Si heterostructures produced by MEVVA implantation

Wensheng Guo; Ziqing Zhu; Saipeng Wong

doi:10.1117/12.318356

10 August 1998 Spectroellipsometric study of SiC/Si heterostructures produced by MEVVA implantation

Wensheng Guo, Ziqing Zhu, Saipeng Wong

Proceedings Volume 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II; (1998) https://doi.org/10.1117/12.318356
Event: Photonics China '98, 1998, Beijing, China

Abstract

SiC material is of intense interest because of its unique features. Two samples of SiC/Si heterostructures were prepared by ion beam synthesis (IBS) with metal vapor vacuum arc ion source at an energy of 65keV and a dose of 1.0 by 10¹⁸ cm^-2. After implantation, one sample was annealed in nitrogen ambient at 1250 degrees C for 10 hours. Spectroscopic ellipsometry (SE) was then performed to study these two samples with the wavelength range of 400-2000nm at a fixed angle of incidence. For the interpretation of SE spectra, the material and optical properties of the annealed sample had been derived. SE result confirmed the formation of a thick buried SiC layer for the annealed sample, but the optical property of this buried layer was found to be different from that of bulk SiC material even if a long time annealing at high temperature was performed. These results were further substantiated by other techniques, including FTIR, XPS and RBS. For the as-implanted sample, different models had been tried but they were not reasonable enough to fit the SE spectra well, the point was how to simulate the optical response of the free carbon atoms distributed in the sample. Further investigation is needed.

Citation Download Citation

Wensheng Guo, Ziqing Zhu, and Saipeng Wong "Spectroellipsometric study of SiC/Si heterostructures produced by MEVVA implantation", Proc. SPIE 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II, (10 August 1998); https://doi.org/10.1117/12.318356

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