CVD photoresist performance for 248-nm lithography

Cedric Monget; Olivier P. Joubert; Timothy W. Weidman; Olivier Toublan; Jean-Pierre Panabiere; Andre P. Weill

doi:10.1117/12.350265

11 June 1999 CVD photoresist performance for 248-nm lithography

Cedric Monget, Olivier P. Joubert, Timothy W. Weidman, Olivier Toublan, Jean-Pierre Panabiere, Andre P. Weill

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350265
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Some of the major limitations of top surface imaging schemes are now well documented: critical dimension (CD) control across the wafer can be a serious issue as well as line edge roughness (LER). A primary focus of our work has been to investigate the performance of the 248 nm bi-level negative tone approach of the CVD photoresist process based on the plasma polymerization of methylsilane. In this paper, CD control data within a field and across the wafer are presented. CD control is shown to be very strongly dependent on the uniformity of the development step. The best results are obtained when using straight chlorine for the plasma etch development step.

Citation Download Citation

Cedric Monget, Olivier P. Joubert, Timothy W. Weidman, Olivier Toublan, Jean-Pierre Panabiere, and Andre P. Weill "CVD photoresist performance for 248-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350265

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