Paper
11 June 1999 Formulation robustness of a chemically amplified ESCAP-type resist based on hydroxystyrene/t-butyl acrylate copolymer
Medhat A. Toukhy, S. Chnthalyma, D. Khan, G. McCormick, T. V. Jayaraman, Veerle Van Driessche
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Abstract
This paper describes the formulation robustness of an 'ESCAP' type resist based on hydroxystyrene/t-butyl acrylate copolymer. The resist formation matrix consists of the polymer, a photo acid generator (PAG) and a base. The performance of the resist design was tested lithographically over 900 angstrom DUV-30 BARC as a function of variations in the PAG concentration and the base ratio to the PAG. The post exposure bake (PEB) temperature was also investigated as a third process variable in addition to the first two formation variables. The analysis of the results shows high performance tolerance to the formation variables. The resolution, focus latitude and exposure margin exhibited high tolerance to changes in the PEB temperature, PAG or base ratios.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Medhat A. Toukhy, S. Chnthalyma, D. Khan, G. McCormick, T. V. Jayaraman, and Veerle Van Driessche "Formulation robustness of a chemically amplified ESCAP-type resist based on hydroxystyrene/t-butyl acrylate copolymer", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350260
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KEYWORDS
Photoresist processing

Tolerancing

Polymers

Deep ultraviolet

Manufacturing

Temperature metrology

Inspection

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