Matching simulation and experiment for chemically amplified resists

Chris A. Mack; Monique Ercken; Myriam Moelants

doi:10.1117/12.354330

26 July 1999 Matching simulation and experiment for chemically amplified resists

Chris A. Mack, Monique Ercken, Myriam Moelants

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354330
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

In this paper, the method for tuning a lithography simulator to match simulation to experiment, proposed by Thornton and Mack, was extended to a chemically amplified deep-UV resist process. After performing the Thornton-Mack tuning, the post-exposure bake (PEB) parameters of the resist were adjusted in the simulator to mach experimental results. In particular, measurements of E_o versus time and temperature of the PEB were used to 'calibrate' the actual PEB hotplate to the simulated hotplate and to estimate the amount of base quencher in the resist. Once tuned, the simulator was used to predict CD performance and compared to experimental results.

Citation Download Citation

Chris A. Mack, Monique Ercken, and Myriam Moelants "Matching simulation and experiment for chemically amplified resists", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354330

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