Paper
19 October 1999 Au/CdZnTe/CdS m-i-n detectors fabricated by sputtering technique
Stephen U. Egarievwe, Henry Chen, Kaushik Chattopadhyay, Jean-Olivier Ndap, Oludurotimi O. Adetunji, T. McMillan, Oghaghare K. Okobiah, Arnold Burger, Ralph B. James
Author Affiliations +
Abstract
The electrical and detection properties of Au/CdZnTe/CdS (m- i-n) gamma-ray and x-ray detectors, fabricated by sputtering technique, have been studied. The CdZnTe crystal was grown by the High Pressure Bridgman method. Current-voltage measurements show that the leakage current is reduced by an order of magnitude when the m-i-n detector is reversed biased. This is due to increased contact barriers, which produced effective blocking contacts. An energy resolution of 3.6 percent for the 59.6 keV line of 241Am was obtained in the reverse bias, with almost no energy resolution for the forward bias due to excessive leakage current.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen U. Egarievwe, Henry Chen, Kaushik Chattopadhyay, Jean-Olivier Ndap, Oludurotimi O. Adetunji, T. McMillan, Oghaghare K. Okobiah, Arnold Burger, and Ralph B. James "Au/CdZnTe/CdS m-i-n detectors fabricated by sputtering technique", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366629
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Cadmium sulfide

Fabrication

Sputter deposition

X-ray detectors

Electrons

Gamma radiation

Back to Top