Charge impurity states of In, Ga, Ge in narrow-gap PbTe

Vladimir P. Zlomanov; Alexander K. Tkalich

doi:10.1117/12.368348

4 November 1999 Charge impurity states of In, Ga, Ge in narrow-gap PbTe

Vladimir P. Zlomanov, Alexander K. Tkalich

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368348
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The XPS/XAES technique is applied to analyze the dominant electronic state of In, Ga, Ge impurities in PbTe single crystals doped above the point of Fermi level stabilization. It is shown that the effective electronic state of In impurity in PbTe can be represented as a mixture of 5s²5p¹ and 5s⁰5p³ configurations, while Ga impurity atoms are present in the donor configuration 4s⁰4p³. Oxidation state of Ge-atom is more than 2+. Vacancionic and interstitial clusters were revealed in Pb_1-xIn_xTe by x-ray diffusive scattering method.

Citation Download Citation

Vladimir P. Zlomanov and Alexander K. Tkalich "Charge impurity states of In, Ga, Ge in narrow-gap PbTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368348

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