Pinning of the Fermi level in A2B6 semiconductors

Vladimir N. Babentsov

doi:10.1117/12.368381

4 November 1999 Pinning of the Fermi level in A₂B₆ semiconductors

Vladimir N. Babentsov

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368381
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The phenomenon of Fermi-level 'pinning' was investigated in A²B⁶ compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy E_FS equals 4, 9 eV is valid for A²B⁶ compounds as for A⁴and A³B⁵ semiconductors. On this basis the position of Fermi-level 'pinning' for A²B⁶ compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.

Citation Download Citation

Vladimir N. Babentsov "Pinning of the Fermi level in A₂B₆ semiconductors", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368381

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