Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe

S. G. Gasan-Zade; G. A. Shepelskii; S. V. Staryj; M. V. Strikha; Fedir T. Vasko

doi:10.1117/12.368374

4 November 1999 Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg_1-xCd_xTe

S. G. Gasan-Zade, G. A. Shepelskii, S. V. Staryj, M. V. Strikha, Fedir T. Vasko

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368374
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The stimulated emission of far IR radiation from uniaxially strained gapless Hg_1-xCd_xTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.

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S. G. Gasan-Zade, G. A. Shepelskii, S. V. Staryj, M. V. Strikha, and Fedir T. Vasko "Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg_1-xCd_xTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368374

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