Structurally variable cyclopolymers with excellent etch resistance and their application to 193-nm lithography

John M. Klopp; Dario Pasini; Jean M. J. Frechet; Jeff D. Byers

doi:10.1117/12.388314

23 June 2000 Structurally variable cyclopolymers with excellent etch resistance and their application to 193-nm lithography

John M. Klopp, Dario Pasini, Jean M. J. Frechet, Jeff D. Byers

Author Affiliations +

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388314
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

We report on the development and exploitation of a new type of chemically amplified resist for 193 nm microlithography. The approach has great versatility as it involves a general structure amenable to radical cyclopolymerization that contains easily interchanged ester functionalities. As the mechanism of polymerization involves free radicals, changes may be made either in the polymerization conditions or in the monomer feed to adjust variables such molecular weight or etch resistance. The latter property is favorably influenced by the formation of new ring structures during polymerization. Variations in the nature of the ester moieties contained in the monomer area easily accomplished to modify the imaging characteristics, surface properties, or etch resistance of the polymers. We report the preparation of a number of novel polymer and copolymer structures and their preliminary testing as resist candidates for 193 nm lithography.

Citation Download Citation

John M. Klopp, Dario Pasini, Jean M. J. Frechet, and Jeff D. Byers "Structurally variable cyclopolymers with excellent etch resistance and their application to 193-nm lithography", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388314

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