Reactive pulsed laser deposition assisted by rf discharge plasma

Armelle Basillais; Jacky Mathias; Chantal Boulmer-Leborgne; Jacques Perriere

doi:10.1117/12.407326

16 August 2000 Reactive pulsed laser deposition assisted by rf discharge plasma

Armelle Basillais, Jacky Mathias, Chantal Boulmer-Leborgne, Jacques Perriere

Proceedings Volume 4065, High-Power Laser Ablation III; (2000) https://doi.org/10.1117/12.407326
Event: High-Power Laser Ablation, 2000, Santa Fe, NM, United States

Abstract

AlN nitride films are grown by reactive pulsed laser ablation of aluminum target in N₂ atmosphere. The influence of process parameters such as N₂ pressure and laser fluence is investigated. Films are characterized by Rutherford Backscattering Spectroscopy, Nuclear Reaction Analysis, X Ray Diffraction and X Ray Photoelectron Spectroscopy. O contamination appears in the film and its origin is discussed. To enhance N₂ dissociation, a RF discharge device is coupled to the deposition chamber. Its effect on thin film composition is studied. Emission spectroscopy is performed in order to find the best RF working point for N₂ molecule dissociation and to understand species transport from the target towards the substrate as a function of process parameters. Thin film with a stoichiometry near to Al₁N₁ can be obtained with low O contamination working with 6 J/cm² laser fluence, 0.01 mbar N₂ with RF discharge added.

Citation Download Citation

Armelle Basillais, Jacky Mathias, Chantal Boulmer-Leborgne, and Jacques Perriere "Reactive pulsed laser deposition assisted by rf discharge plasma", Proc. SPIE 4065, High-Power Laser Ablation III, (16 August 2000); https://doi.org/10.1117/12.407326

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