Paper
19 July 2000 Development of halftone phase-shift blank and mask fabrication for ArF lithography
Hideki Suda, Hideaki Mitsui, Osamu Nozawa, Hitoshi Ohtsuka, Megumi Takeuchi, Naoki Nishida, Yasushi Okubo, Masao Ushida
Author Affiliations +
Abstract
The halftone phase-shift mask has been in practical use for i-line and KrF lithography. In ArF lithography, the HtPSM is also considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We in HOYA have attempted to expand the applicability of our MoSi-based HtPSM blank technology to ArF lithography, helping extend the life of the existing infrastructure for conventional HtPSM fabrication. We have completed tuning our new MoSi-based film for ArF application. The film's optical properties, chemical durability and ArF laser irradiation durability meet industry requirements; and it is compatible with conventional mask-making process and repair techniques for the KrF HtPSM.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideki Suda, Hideaki Mitsui, Osamu Nozawa, Hitoshi Ohtsuka, Megumi Takeuchi, Naoki Nishida, Yasushi Okubo, and Masao Ushida "Development of halftone phase-shift blank and mask fabrication for ArF lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392099
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Lithography

Binary data

Halftones

Laser irradiation

Scanning electron microscopy

Mask making

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