Paper
28 June 2000 Film stress and adhesion characteristics of passivation layers for thermal ink-jet print head
Yih-Shing Lee, Yi-Yung Wu, Chen-Yue Cheng, DongSing Wuu
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Abstract
Amorphous, hydrogenated silicon carbide (a-SiC:H) deposited by plasma-enhanced-chemical-vapor deposition has been used as the most important film of passivation layers in a thermal ink-jet printhead. When the printhead was thermal- cycled from room temperature to about 400 degree(s)C, the a-SiC:H film is sustained by a variety of thermal and mechanical stresses that are detrimental to it's integrity. Thermal stress changes of a-SiC:H films were varied with different CH4/SiH4 gas ratios. Microstructure investigation was mainly achieved by FTIR technique. Less variation of the Si-H absorption bond causes less thermal stress change. Thin-film adhesion is an important problem in thermal ink- jet printhead between the Ta thin film and a-SiC:H films. A qualitative measure of film adhesion can be made with the scratch tester. The adhesive critical load and Ta coating failure modes on a-SiC:H were acquired to examine the film adhesion on these two investigated films. The adhesion depends on the nature of the interfacial region, which depends on the interactions between the depositing Ta thin film and the surface a-SiC:H films. An increased effective contact area in the interfacial region promotes a good adhesion.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yih-Shing Lee, Yi-Yung Wu, Chen-Yue Cheng, and DongSing Wuu "Film stress and adhesion characteristics of passivation layers for thermal ink-jet print head", Proc. SPIE 4080, Input/Output and Imaging Technolgies II, (28 June 2000); https://doi.org/10.1117/12.389451
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KEYWORDS
Tantalum

Silicon carbide

Thin films

Coating

Silicon

Absorption

FT-IR spectroscopy

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