Characterization of PZT thick films derived from sol-gel techniques

Jinrong Cheng; Laiqing Luo; Zhongyan Meng

doi:10.1117/12.408336

29 November 2000 Characterization of PZT thick films derived from sol-gel techniques

Jinrong Cheng, Laiqing Luo, Zhongyan Meng

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408336
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Crack free and preferred orientation Pb(Zr_xTi_1-x)O₃ (x equals 0.45) thick films were prepared onto Pt(111)/Ti/TiO₂/Si substrates by sol-gel and RTA techniques. Dielectric constants of PZT films increase with increasing the thickness. The as-prepared PZT films exhibited self-poling phenomenon and intrinsic piezoelectric responses. The PZT thick and thin films have different self- poling and poling effects. The internal bias field contributed to the intrinsic piezoelectric responses.

Citation Download Citation

Jinrong Cheng, Laiqing Luo, and Zhongyan Meng "Characterization of PZT thick films derived from sol-gel techniques", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408336

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