Paper
29 November 2000 PMMA deep etching by O2RIE
Aibin Yu, Guifu Ding, Xiaoyun Guo, Changmin Li, Haiping Mao, Zhiping Ni
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408400
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The microstructures that have relatively large height, high aspect ratio are very important for improving micro-devices' characteristics. In this paper reactive ion etching (RIE) of PMMA to create high aspect ratio micro-structures was described. We use Ni film as mask, which was patterned by usual photochemical etching, then use O2RIE technology to etch PMMA thick film (100 micrometers ). During the etching process, O2 pressure, etching power are very important for the etching results. There are grass-like residues remained on the etched surface until the PMMA was over etched, this phenomena is caused by the micro-mask effect. With over etched, the grass-like residues can be eliminated. The etched surface is very smooth and the side wall is vertical. The etching depth can get up to higher than 100 (mu) M and the aspect ratio is 5.
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Aibin Yu, Guifu Ding, Xiaoyun Guo, Changmin Li, Haiping Mao, and Zhiping Ni "PMMA deep etching by O2RIE", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408400
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KEYWORDS
Etching

Polymethylmethacrylate

Reactive ion etching

Nickel

Oxygen

Ions

Photomasks

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