Strains in Si substrate induced by formation of Ge islands

Weirong Jiang; Zuimin Jiang; Bin Shi; Hui Xiong; D. Z. Hu; D. W. Gong; Y. L. Fan; Xiaoming Jiang; Q. J. Jia; W. L. Zheng; D. C. Qian

doi:10.1117/12.408406

29 November 2000 Strains in Si substrate induced by formation of Ge islands

Weirong Jiang, Zuimin Jiang, Bin Shi, Hui Xiong, D. Z. Hu, D. W. Gong, Y. L. Fan, Xiaoming Jiang, Q. J. Jia, W. L. Zheng, D. C. Qian

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408406
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Grazing incidence x-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. Deformation strains in the substrate underneath or surrounding the dots induced by formation of Ge quantum dots are investigated. Besides a tensile strain existing underneath the dots, a peak located at the higher angle side of Si(220) or Si(400) is observed for the first time, the origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain corresponds to a -0.8% lattice constant change parallel to the interface.

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Weirong Jiang, Zuimin Jiang, Bin Shi, Hui Xiong, D. Z. Hu, D. W. Gong, Y. L. Fan, Xiaoming Jiang, Q. J. Jia, W. L. Zheng, and D. C. Qian "Strains in Si substrate induced by formation of Ge islands", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408406

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