Ro y H. Cornely,1 Lawrence Suchow,2 Robert Bourne,3 Michael Mulligan,3 Riaz Haq,3 Chia-Jen Wu3
1Department of Electrical Engineering (United States) 2Department of Chemical Engineering and Chemistry (United States) 3New Jersey Institute of Technology (United States)
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A large number of (Hg.8Cd.2)Te films, about ten microns thick, were prepared on low-cost Si substrates by r.f..triode-sputtering in a Hg atmosphere. The sensitivity of the film conduction properties to small changes in snutter-deposition parameters (particularly Hg sputtering gas pressure and substrate dc bias and temnerature) and to post deposition annealina parameters was studied by Vanderpauw Hall effect measurements variable tempera-ture and magnetic field. Wavelength dispersive electron-probe microanalysis and optical absorption analysis were used to measure the film composition which under the proper souttering conditions matched the nominal composition value of the pressed-powder target in the 0.2-0.27 x value range. Substrate bias to remove impurities depositing during the sputter-ing process was found to be effective for obtaining n-type films with carrier concentrations as low as 1015 cm-3 at 1000oK. Although the electron mobilities were only about 10% of bulk values, the experimental results indicate that considerable improvement can be obtained by further fine tuning of the deposiiton and annealing parameters.
Ro y H. Cornely,Lawrence Suchow,Robert Bourne,Michael Mulligan,Riaz Haq, andChia-Jen Wu
"Conduction Pronerties Of Annealed (Hg.8Cd.2)Te Thin Films On Silicon Substrates Prepared By Triode-Sputtering With Substrate Bias", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935731
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Ro y H. Cornely, Lawrence Suchow, Robert Bourne, Michael Mulligan, Riaz Haq, Chia-Jen Wu, "Conduction Pronerties Of Annealed (Hg[sub].8[/sub]Cd[sub].2[/sub])Te Thin Films On Silicon Substrates Prepared By Triode-Sputtering With Substrate Bias," Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935731