Paper
30 January 2001 Laser synthesis of disilicides based on iron and their application for photothermal tensoconverters
Sergey A. Mulenko, Michail M. Nishchenkko, Nikolai T. Gorbachuk
Author Affiliations +
Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413766
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation
Abstract
In the present work iron discilicides were synthesized in tow phases: metal and semiconductor under the action of YAG:Nd+3-laser radiation on pure iron thin film to have been sputtered on Si substrate surface. Temperature dependencies of specific conductivity for samples with iron discilicides layers revealed the presence of semiconductor and metal phase in the formed alloy owing to the rapid solidification of the molten phases after finishing of laser pulse. There is decreasing of (sigma) equals (0.40 divided by 0.08)(Omega) -1 cm-1 while decreasing the sample temperature in the range (333 divided by 77)K. For all samples one can see decreasing of bandgap while increasing of laser power density. Electrical resistance as a function of relative mechanical deformation was measured on obtained samples. While changing of relative resistance in the range (0 divided by 1.6) X 10-2 meaning of (epsilon) was being changed in the range (0 divided by 1.6) X 10-4.
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Sergey A. Mulenko, Michail M. Nishchenkko, and Nikolai T. Gorbachuk "Laser synthesis of disilicides based on iron and their application for photothermal tensoconverters", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); https://doi.org/10.1117/12.413766
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KEYWORDS
Iron

Semiconductors

Resistance

Silicon

Pulsed laser operation

Semiconductor lasers

Laser energy

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