CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 4280 > Article
Paper
23 April 2001 Control of low-temperature-grown GaAs for ultrafast switching applications
Valentin Ortiz, Max Stellmacher, Xavier Marcadet, Stephane Formont, Didier Adam, Julien Nagle, Jean-Francois Lampin, Antigoni Alexandrou
Author Affiliations +
Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424736
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The dynamic properties of low-temperature-grown GaAs (LT- GaAs) depend critically on growth and annealing conditions, such as substrate temperature during the MBE process (Ts), annealing temperature (Ta) and duration ((tau) a). Previous empirical models based on carrier rate- equations introduce parameters, such as carrier lifetime, that cannot be directly correlated with growth and annealing conditions. The Schockley-Read-Hall model we use here introduces deep donor (NDD) and acceptor (NA) concentrations, instead of lifetimes. In LT-GaAs, deep donors are in majority constituted by an As-antisite related defect. The acceptors, in absence of doping, are most likely constituted either by Ga vacancy defects or by the residual doping during MBE growth. The samples studied are grown on GaAs semi-insulating substrates at different Ts and annealed under different conditions. For each sample, we first measure NDD using X-ray diffraction analysis. Then we fit both continuous photoconductivity and pump-probe reflectometry measurements using NA as the only adjustable parameter. From the set of data obtained, we can relate Ts, Ta and (tau) a with NDD and NA. This gives us a way to predict LT-GaAs dynamics from growth and annealing continues. This approach has been used to fabricate ultrafast photoconductive switches showing high sensitivity and good insulation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Valentin Ortiz, Max Stellmacher, Xavier Marcadet, Stephane Formont, Didier Adam, Julien Nagle, Jean-Francois Lampin, and Antigoni Alexandrou "Control of low-temperature-grown GaAs for ultrafast switching applications", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424736
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 9 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Annealing
Absorption
Electrons
Reflectivity
Gallium arsenide
Switches
Ultrafast phenomena
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top