Temperture-gradient and composition-spread deposition of epitaxial oxide films and high-throughput characterization

Tomoteru Fukumura; M. Ohtani; J. Nishimura; T. Kageyama; Takashi Koida; Mikk Lippmaa; Masashi Kawasaki; Tetsuya Hasegawa; Hideomi Koinuma

doi:10.1117/12.424755

23 April 2001 Temperture-gradient and composition-spread deposition of epitaxial oxide films and high-throughput characterization

Tomoteru Fukumura, M. Ohtani, J. Nishimura, T. Kageyama, Takashi Koida, Mikk Lippmaa, Masashi Kawasaki, Tetsuya Hasegawa, Hideomi Koinuma

Author Affiliations +

Proceedings Volume 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II; (2001) https://doi.org/10.1117/12.424755
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

We have developed a laser molecular beam epitaxy system capable of the temperature-gradient and/or composition-spread integration of thin films in a substrate. The latter is achieved by using a moving mask system synchronizing with target exchange and laser pulse. The former employs a substrate holder having a controlled asymmetric thermal conduction heated by a focused Nd:YAG continuous wave laser beam. A concurrent x-ray diffractometer can immediately characterize the dependences of the lattice constant and crystalline quality on the film growth temperature and composition. The temperature-gradient method is very useful for revealing an optimum substrate temperature for epitaxial thin film growth. Several other characterization techniques such as magnetic field microscope and parallel transport measurement system developed for characterizing composition-spread thin films are presented.

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Tomoteru Fukumura, M. Ohtani, J. Nishimura, T. Kageyama, Takashi Koida, Mikk Lippmaa, Masashi Kawasaki, Tetsuya Hasegawa, and Hideomi Koinuma "Temperture-gradient and composition-spread deposition of epitaxial oxide films and high-throughput characterization", Proc. SPIE 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II, (23 April 2001); https://doi.org/10.1117/12.424755

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