Role of localization effects in GaN and InGaN

M. Godlewski; E. M. Goldys

doi:10.1117/12.417584

8 March 2001 Role of localization effects in GaN and InGaN

M. Godlewski, E. M. Goldys

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417584
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

Strong localization effects are observed in epilayers of GaN and InGaN. We relate them to microstructure characteristics of samples studied. The same mechanism of localization is shown to be the dominant in GaN and in InGaN. Influence of strong localization effects on light emission properties is discussed.

Citation Download Citation

M. Godlewski and E. M. Goldys "Role of localization effects in GaN and InGaN", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417584

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