Novel CA resists with photoacid generator in polymer chain

Hengpeng Wu; Kenneth E. Gonsalves

doi:10.1117/12.436884

24 August 2001 Novel CA resists with photoacid generator in polymer chain

Hengpeng Wu, Kenneth E. Gonsalves

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436884
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Novel chemically amplified resists with photoacid generating units in the polymer chains were synthesized and their lithographic properties evaluated under both 248nm and 20keV electron exposures. The positive-tone CA resists were found to exhibit excellent film formation behavior and extremely high sensitivity.

Citation Download Citation

Hengpeng Wu and Kenneth E. Gonsalves "Novel CA resists with photoacid generator in polymer chain", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436884

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