Thermoradiation modification of characteristics of silicon diffusion diodes

Shermakhmat Makhkamov; Nigmatilla A. Tursunov; Maripjon Ashurov; Zokirkhon M. Khakimov

doi:10.1117/12.425277

23 April 2001 Thermoradiation modification of characteristics of silicon diffusion diodes

Shermakhmat Makhkamov, Nigmatilla A. Tursunov, Maripjon Ashurov, Zokirkhon M. Khakimov

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425277
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

The combined influence of irradiation and thermal treatment upon efficiency of formation of stable radiation defects in silicon diffusion diodes was studied by DLTS and measurements of transient characteristics. High-temperature (300 - 450 degrees Celsius) irradiation by 4 MeV electrons to fluences of 10¹⁵ - 10¹⁶ cm^-2 was found to give rise the following radiation defect levels of acceptor nature: E_c- 0.13 eV and E_c-0.2 eV attributed to the complexes V-O₃ and C_sO_i-C_s, as well as E_c-0.35 eV that related with a complex of C, O, and vacancy. The studies of influence of isochronal annealing on properties of these radiation defects have shown their thermal stability till temperature of 500 degrees Celsius. On the basis of obtained results the thermo-radiation approach is proposed for modification of characteristics of silicon p⁺-n structures, which is of important for regulation of thermal stability of recombination parameters of diodes together with increasing of their yield by 5 - 6%.

Citation Download Citation

Shermakhmat Makhkamov, Nigmatilla A. Tursunov, Maripjon Ashurov, and Zokirkhon M. Khakimov "Thermoradiation modification of characteristics of silicon diffusion diodes", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425277

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