Advanced e-beam reticle writing system for next-generation reticle fabrication

Akira Fujii; Kazui Mizuno; Tetsuji Nakahara; Suyo Asai; Yasuhiro Kadowaki; Hajime Shimada; Hiroshi Touda; Ken Iizumi; Hiroyuki Takahashi; Kazuyoshi Oonuki; Toshikazu Kawahara; Katsuhiro Kawasaki; Koji Nagata; H. Satoh

doi:10.1117/12.438405

5 September 2001 Advanced e-beam reticle writing system for next-generation reticle fabrication

Akira Fujii, Kazui Mizuno, Tetsuji Nakahara, Suyo Asai, Yasuhiro Kadowaki, Hajime Shimada, Hiroshi Touda, Ken Iizumi, Hiroyuki Takahashi, Kazuyoshi Oonuki, Toshikazu Kawahara, Katsuhiro Kawasaki, Koji Nagata, H. Satoh

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438405
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

A new advanced e-beam reticle writing system HL-950M has been developed to meet requirements for the production of 130 nm node reticles as well as development of 100 nm node reticles. In order to improve the critical dimension (CD) accuracy and pattern positioning accuracy, several new technologies have been introduced on the basis of the field-proven technologies of the previous system HL-900M. Fine address size is realized by a newly developed control electronics2 that enables the system to handle address unit of 2.5 nm, providing four times higher resolution than HL-900M. Reconstruction of sub-sub-field (SSF) pattern data has been developed so that the same pattern is exposed twice with reconstructed SSF pattern data sets with different SSF boundaries, realizing better stitching and positioning accuracy. High accuracy proximity effect correction has been developed with a new second order proximity effect calculation scheme, providing better CD uniformity particularly against drastic change of the pattern density. As main results of the system evaluation, the global CD accuracy of 9 nm (3(sigma) ) and the global pattern positioning accuracy of 15 nm (3(sigma) ) have been obtained. The overall performance of the HL-950M system has satisfied the specifications required for the 130 nm node reticle production and 100nm node reticle development.

Citation Download Citation

Akira Fujii, Kazui Mizuno, Tetsuji Nakahara, Suyo Asai, Yasuhiro Kadowaki, Hajime Shimada, Hiroshi Touda, Ken Iizumi, Hiroyuki Takahashi, Kazuyoshi Oonuki, Toshikazu Kawahara, Katsuhiro Kawasaki, Koji Nagata, and H. Satoh "Advanced e-beam reticle writing system for next-generation reticle fabrication", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438405

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