IR spectroscopic ellipsometry for industrial characterization of semiconductors

Pierre Boher; Marc Bucchia; Jean-Philippe Piel; Christophe Defranoux; Jean-Louis P. Stehle; Christopher Pickering

doi:10.1117/12.450110

10 December 2001 IR spectroscopic ellipsometry for industrial characterization of semiconductors

Pierre Boher, Marc Bucchia, Jean-Philippe Piel, Christophe Defranoux, Jean-Louis P. Stehle, Christopher Pickering

Proceedings Volume 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II; (2001) https://doi.org/10.1117/12.450110
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Spectroscopic ellipsometry has long been recognized as a powerful technique to characterize thin films and multilayer structures. It is now routinely used for non-destructive on-line characterization of semiconductor process. SOPRA, leader in commercial spectroscopic ellipsometer for research and development, has already developed an infrared ellipsometer as an option on visible instrument to provide the largest wavelength range available up to now (from deep UV 190 nm to far infrared up to 18 micrometers ). A new design of the instrument is presented here which includes a small spot size to get ride of the problems of back face reflection on silicon wafers, and an improved signal /noise ratio to allow rapid measurements compatible with an industrial environment. Some examples of application concerning dopant density in epilayers and composition of low k dielectrics are presented.

Citation Download Citation

Pierre Boher, Marc Bucchia, Jean-Philippe Piel, Christophe Defranoux, Jean-Louis P. Stehle, and Christopher Pickering "IR spectroscopic ellipsometry for industrial characterization of semiconductors", Proc. SPIE 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II, (10 December 2001); https://doi.org/10.1117/12.450110

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