Optimization of alternating phase shifting mask structure

Han-Sun Cha; Se-Jong Choi; Si-Yeul Yoon; Sung-Mo Jung; Sang-Soo Choi; Soo-Hong Jeong

doi:10.1117/12.458265

11 March 2002 Optimization of alternating phase shifting mask structure

Han-Sun Cha, Se-Jong Choi, Si-Yeul Yoon, Sung-Mo Jung, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458265
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

Many studies have reported that the alternating phase shift mask (Alt. PSM) improves resolution and depth of focus (DOF). The purpose of this study is to investigate the influence of process latitude and optimize undercut and pre etch depth of both single trench and dual trench process employing the Solid-CMTM simulation tool for 248 nm DUV lithography system. To compensate for the imbalance intensity, we adopted the amount of undercut in the phase shifter regions of both single trench and dual trench. The results suggest that process is improved with optimized undercut for 130 nm line & space (L/S). For the single trench, we can see that with undercut of about 800 Angstrom the max intensities are equal. In the case of dual trench, the margins for image balance of 800 Angstrom and 1600 Angstrom undercuts was obtained up to 800 Angstrom, 1200 Angstrom of pre etch depth, respectively. Finally, it was found that the effect of undercut was improving the process latitude and the balance intensity of both single trench and dual trench.

Citation Download Citation

Han-Sun Cha, Se-Jong Choi, Si-Yeul Yoon, Sung-Mo Jung, Sang-Soo Choi, and Soo-Hong Jeong "Optimization of alternating phase shifting mask structure", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458265

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