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The semiconductor microcylinder lasers with whispering-gallery modes are expected to be with execllent performances, such as low threshold current density and high efficiency. The spontaneous emission characteristics of microcylinder laser due to microcavity effect is strongly modified. Another excellence of whispering-gallery mode devices is that the probability of planar integration with waveguide devices and detectors. In this work InGaAs/InGaAsP microcylinder laser was fabricated by wet chemical etching. The diameter of the microcylinder is about 10micrometers or 5micrometers . With our improved processing the microcylinder was with smooth side wall, ensuring high Q-factor. The lasing at about 1.5micrometers was observed at low temperature.
Yuzhai Pan,Yongqiang Ning,Li Qin,Hui Suo,Yun Liu, andLijun Wang
"Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444735
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Yuzhai Pan, Yongqiang Ning, Li Qin, Hui Suo, Yun Liu, Lijun Wang, "Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching," Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444735