Paper
27 March 2002 Photosensitivity and photoemission porous-silicon-based heterostructures
Liubomyr S. Monastyrskii, Andrii P. Vlasov, Igor B. Olenych, Petro P. Parandiy, Volodymyr P. Savchyn, Sergii O. Kostukevich
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Abstract
We were investigated photoluminescence, cathodoluminescence and photosensitivity properties of porous silicon (PS) and PS capsulated by Al2O3 thin film. This film was deposited by RF magnetron sputtering in argon - oxygen atmosphere and had crystalline structure. PS was processed in hydrogen under the high pressure. Light-emission and photosensitivity spectra such double structures in visible and infrared region were investigated. The process of light emitting had tendency to decrease. The cathodoluminescence decay for Al2O33-PS-silicon substrate heterostructure was lower then for PS-silicon substrate.
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Liubomyr S. Monastyrskii, Andrii P. Vlasov, Igor B. Olenych, Petro P. Parandiy, Volodymyr P. Savchyn, and Sergii O. Kostukevich "Photosensitivity and photoemission porous-silicon-based heterostructures", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); https://doi.org/10.1117/12.463852
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KEYWORDS
Picosecond phenomena

Aluminum

Silicon

Heterojunctions

Silicon films

Visible radiation

Infrared radiation

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