Comparison of measured optical image profiles of silicon lines with two different theoretical models

Richard M. Silver; Ravikiran Attota; M. Stocker; Jau-Shi Jay Jun; Egon Marx; Robert D. Larrabee; Beth Russo; Mark P. Davidson

doi:10.1117/12.473479

16 July 2002 Comparison of measured optical image profiles of silicon lines with two different theoretical models

Richard M. Silver, Ravikiran Attota, M. Stocker, Jau-Shi Jay Jun, Egon Marx, Robert D. Larrabee, Beth Russo, Mark P. Davidson

Author Affiliations +

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473479
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper, we describe a new method for the separation of tool-induced measurement errors and sample-induced measurement errors. We apply the method to standard overlay target configurations. This method is used to separate the effects of the tool and sample errors in the measured optical intensity profiles and to obtain the best estimate of the correct intensity profile for a given sample geometry. This most accurate profile is then compared to calculated profiles from two different theoretical models. We explain the modeling in some detail when it has not been previously published.

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Richard M. Silver, Ravikiran Attota, M. Stocker, Jau-Shi Jay Jun, Egon Marx, Robert D. Larrabee, Beth Russo, and Mark P. Davidson "Comparison of measured optical image profiles of silicon lines with two different theoretical models", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473479

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