Paper
24 July 2002 Novel alicyclic polymers having 7,7-dimethyloxepan-2-one acid labile groups for ArF lithography
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Abstract
The present paper describes a novel class of norbornene- based copolymers containing 7,7-dimethyloxepan-2-one acid labile groups. Poly(3-(bicyclo[2.2.1]hept-5-en-2- ylhydroxymethyl)-7,7-dimethyloxepan-2-one-co-5-((2- decahydronaphth-yl)oxycarbonyl)-norbornene-co-5-norbornene- 2-carboxxylic acid-co-maleic anhydride) was synthesized and evaluated as a potential chemically amplified resist for ArF lithography. The 7,7-dimethyloxepan-2-one group of the matrix polymer was readily cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposed region after post-exposure bake. 0.12micrometers line and space patterns were obtained at a dose of 10 mJ cm-2 with a conventional developer, 2.38 wt% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser stepper.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jae-Jun Lee, Jin-Baek Kim, and Kenji Honda "Novel alicyclic polymers having 7,7-dimethyloxepan-2-one acid labile groups for ArF lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474206
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Cited by 3 patents.
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KEYWORDS
Polymers

Silicon

Lithography

Photoresist materials

Polymerization

Semiconducting wafers

Chemically amplified resists

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