Characterization of nanocrystalline silicon films

Hongyi Lin; Jian Zhu

doi:10.1117/12.475049

11 July 2002 Characterization of nanocrystalline silicon films

Hongyi Lin, Jian Zhu

Proceedings Volume 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology; (2002) https://doi.org/10.1117/12.475049
Event: SPIE's 9th Annual International Symposium on Smart Structures and Materials, 2002, San Diego, California, United States

Abstract

The hydrogenated nanocrystalline silicon films have been prepared with plasma enhanced chemical vapor deposition method. The microstructure of these films has been studied by high resolution transmission electron microscopy, Raman scattering spectra and x-ray diffraction analysis methods. The films are especially valuable for some devices, for example, quantum dots, luminescence devices, and film pressure sensors etc. The nc-Si:H films show texture structure. The fractal dimension of this microstructure has been calculated with a Fourier filtered image. The microstructure properties of the films are discussed.

Citation Download Citation

Hongyi Lin and Jian Zhu "Characterization of nanocrystalline silicon films", Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); https://doi.org/10.1117/12.475049

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