Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process

Woo-Gun Jeong; Dae-Woo Kim; Chang-Min Park; Ki-Won An; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi; Soo Hong Jeong

doi:10.1117/12.476970

1 August 2002 Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process

Woo-Gun Jeong, Dae-Woo Kim, Chang-Min Park, Ki-Won An, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi, Soo Hong Jeong

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476970
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

A method of PSM cleaning has been developed and its cleaning performance was studied by changing H₂SO₄ / H₂O₂ mixture(SPM) and diluted standard cleaning-1 (SC-1) chemical ratio and controlling phase and transmittance of KrF HT PSM, within ±3° and ±0.3 percent respectively. The type of residue was scrutinized using KLA-Tencor SL3UV and scanning electron microscopy (SEM) during stepwise process and cleaning. X-ray photoelectron spectroscopy (XPS) was also employed to characterize the residues on the HT PSM surface. Diluted HF (DHF) and DHF/H₂O₂ mixture (FPM) were introduced to etch off the remaining defects on quartz after MoSiON dry etch process and also compared their results with the gas assisted etching (GAE) repair. It has turned out that DHF, FPM and GAE repair removed the remaining defects on quartz respectively. Our results demonstrate that approach of stepwise process inspection is very effective at identifying defects and their sources as they become evident at different process steps. Finally it was shown that diluted SC-1 with quick dump method followed by the direct displacement IPA dry is promising for the improvement of HT PSM cleaning efficiency and its residual impurities and causes no damage on the MoSiON surface. It is found that efficient and effective conventional chemical treatment, direct displacement IPA dry and GAE repair would be considered to be the integrated sequence to control the smallest particles for the HT PSM.

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Woo-Gun Jeong, Dae-Woo Kim, Chang-Min Park, Ki-Won An, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi, and Soo Hong Jeong "Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476970

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KEYWORDS

Etching

Inspection

Particles

Transmittance

Dry etching

Quartz

Neodymium

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