Paper
19 April 2002 PMMA microstructure deep-etch process
A. B. Yu, Ai Qun Liu, Chunsheng Yang, Guifu Ding
Author Affiliations +
Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462885
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France
Abstract
A PMMA-based reactive ion etching (RIE) process for the fabrication of high aspect ration microstructures is described in this paper. Although the resolution of this process is lower than that of the LIGA process, this process provides a simpler way to get higher height and high aspect ration microstructures. In the process, Ni material is selected as mask and patterned using photochemical etching. The self-bias, which is determined by different etching parameters such as etching power and gas pressure etc., is very important. By optimizing the etching parameters, vertical PMMA profile and 5:1 aspect ratio structures can be obtained. The micro-mask effect and high power etching damage are also demonstrated and discussed in this paper.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. B. Yu, Ai Qun Liu, Chunsheng Yang, and Guifu Ding "PMMA microstructure deep-etch process", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); https://doi.org/10.1117/12.462885
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KEYWORDS
Etching

Polymethylmethacrylate

Ions

Nickel

Oxygen

Plasma

Reactive ion etching

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