Paper
16 August 2002 Long-term performance of the DUV optical metrology tool for the 90-nm node
Louis M. Chacon, Nicholas G. Doe, Richard D. Eandi, Patrick St. Cin
Author Affiliations +
Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479347
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
Optical metrology tools have been used very successfully for measuring photomasks. The 90nm node presents new challenges with the requirement to measure dense features with arbitrary line and space widths. This paper presents performance of the Optical Proximity CD Algorithm on the new 244nm DUV optical metrology tool, the KMS100. Results for short and long-term precision, distortion, system error and xy-bias for isolated and dense line/space arrays are presented. The system is demonstrated to be highly linear and largely insensitive to the influence of OPE while maintaining high precision and repeatability.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louis M. Chacon, Nicholas G. Doe, Richard D. Eandi, and Patrick St. Cin "Long-term performance of the DUV optical metrology tool for the 90-nm node", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479347
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KEYWORDS
Optical metrology

Metrology

Photomasks

Deep ultraviolet

Distortion

Argon ion lasers

Lithography

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