Photo-Induced Complex Permittivity Measurements Of Semiconductors At 9 Ghz

I. Shih; L. Ding; T. J.F. Pavlasek; C. H. Champness

doi:10.1117/12.942619

1 November 1987 Photo-Induced Complex Permittivity Measurements Of Semiconductors At 9 Ghz

I. Shih, L. Ding, T. J.F. Pavlasek, C. H. Champness

Proceedings Volume 0477, Optical Technology for Microwave Applications I; (1987) https://doi.org/10.1117/12.942619
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

This paper describes a microwave method for determining the photo-induced incremental complex permittivity of semiconductor materials such as Si, Ge, Te, and-- also for the determination of the average collision time. An unbalanced bridge technique is used which allows sensitive measurements even at low optical illumination levels, with relatively simple computational procedures. This method is thus useful for evaluating the potential usefulness of semiconductors for optically controlled microwave devices.

Citation Download Citation

I. Shih, L. Ding, T. J.F. Pavlasek, and C. H. Champness "Photo-Induced Complex Permittivity Measurements Of Semiconductors At 9 Ghz", Proc. SPIE 0477, Optical Technology for Microwave Applications I, (1 November 1987); https://doi.org/10.1117/12.942619

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