Paper
4 December 2002 Physics of Output Power Limitations in Long-Wavelength Laser Diodes
Author Affiliations +
Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems; (2002) https://doi.org/10.1117/12.455546
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
Abstract
We analyze the high-temperature continuous-wave performance of 1.3 micron AlGaInAs/InP laser diodes grown by digital alloy molecular beam epitaxy. Commercial laser software is utilized that self-consistently combines quantum well bandstructure and gain calculations with two-dimensional simulations of carrier transport, wave guiding, and heat flow. Excellent agreement between simulation and measurements is obtained by careful adjustment of material parameters in the model. Joule heating is shown to be the main heat source; quantum well recombination heat is almost compensated for by Thomson cooling. Auger recombination is the main carrier loss mechanism at lower injection current. Vertical electron escape into the p-doped InP cladding dominates at higher current and it causes the thermal power roll-off. Self-heating and optical gain reduction are the triggering mechanisms behind the leakage escalation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Piprek, J. Kenton White, and Anthony J. SpringThorpe "Physics of Output Power Limitations in Long-Wavelength Laser Diodes", Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); https://doi.org/10.1117/12.455546
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KEYWORDS
Quantum wells

Semiconductor lasers

Lithium

Temperature metrology

Continuous wave operation

Optical simulations

Absorption

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