Paper
27 December 2002 Investigation of Nanomachining as a Technique for Geometry Reconstruction
Author Affiliations +
Abstract
Nanomachining is a relatively new technique to the semiconductor industry. This technique utilizes the positional control of an atomic force microscope coupled with RAVE LLC's nanomachining head to perform material removal with nanometer level precision. This paper discusses the benefits of that technology as applied to photomask repair. Specifically, we will show the capability of the RAVE nm1300 to reconstruct completely missing contacts on 193 nm - 6% MoSi phase shift material utilizing both symmetric and asymmetric NanoBit tips. Wafer print test data confirmed the MSM-193 (AIMS)TM data that symmetric NanoBit tips have the ability to consistently produce contacts with through focus critical dimensions within 15 nm (1x) of unrepaired contacts. Experiments show that in order to reproduce the correct through focus behavior, the nanomachined depth into the quartz substrate must be controlled to within 5 nm on the photomask. In addition, 193 nm AIMS data show that placement errors of the reconstructed contacts are less than 15 nm (1x). Throughput and tip lifetime for both tip types on these repairs will also be examined.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Brinkley, Ron Bozak, Bin Chiu, Chanh Ly, Vikram Tolani, and Roy White "Investigation of Nanomachining as a Technique for Geometry Reconstruction", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468275
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Cited by 4 scholarly publications.
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KEYWORDS
Quartz

Photomasks

Semiconducting wafers

Phase shifts

Wafer testing

Cadmium

Semiconductors

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