Properties for GaN films on silicon (111) substrates

Yingge Yang; Hong-Lei Ma; Cheng-Shan Xue; Hui-Zhao Zhuang; Jin Ma

doi:10.1117/12.483041

17 September 2002 Properties for GaN films on silicon (111) substrates

Yingge Yang, Hong-Lei Ma, Cheng-Shan Xue, Hui-Zhao Zhuang, Jin Ma

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483041
Event: Photonics Asia, 2002, Shanghai, China

Abstract

High-quality gallium nitride (GaN) films were prepared on Si substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SAED reveal that the films consists of hexagonal wurtzite GaN wiht c-axis oriented polycrystalline grains. A strong UV photoluminescence located at 354 nm is observed for room temperature measurement. The bandgap of these films has a blueshift wiht respect to bulk GaN.

Citation Download Citation

Yingge Yang, Hong-Lei Ma, Cheng-Shan Xue, Hui-Zhao Zhuang, and Jin Ma "Properties for GaN films on silicon (111) substrates", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483041

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