Paper
11 March 2003 Optical feedback dependence of laser diode relative intensity noise
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Abstract
The relative intensity noise (RIN) of a semiconductor laser subject to optical feedback ahs been experimentally studied. At low bias current, a low RIN is observed with low feedback ration, the RIN increased in the coherence collapse regime (regime IV) and decreased in regime V. The RIN in regime V is lower than that of the solitary laser. The measurements are found to be in good qualitative and quantitative agreement with theoretical predictions. For higher bias current, a higher feedback ratio is needed for the semiconductor laser to transit from regime IV to V.
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Yanhau Hong, Sujit Bandyopadhyay, Siva Sivaprakasam, Paul S. Spencer, and Keith Alan Shore "Optical feedback dependence of laser diode relative intensity noise", Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); https://doi.org/10.1117/12.468632
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KEYWORDS
Semiconductor lasers

Radon

Laser optics

Solids

Laser damage threshold

Edge emitting semiconductor lasers

Mirrors

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