Paper
30 May 2003 Observation of field-induced optical phonon amplification in semiconductor nanostructures
W. Liang, Kong-Thon F. Tsen, Otto F. Sankey, Sergiy Mikhailovich Komirenko, Ki Wook Kim, Viatcheslav A. Kochelap, Meng-Chyi Wu, Chong-Long Ho, Wen-Jeng Ho, Hadis Morkoc
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Abstract
We have experimentally proven the Cerenkov generation of optical phonons by drifting electrons in a semiconductor. We observe an instability of the polar optical phonons in nanoscale semiconductors that occurs when electrons are accelerated to very high velocities by intense electric fields. The instability is observed when the electron drift velocity is larger than the phase velocity of optical phonons and rather resembles a “sonic-boom” for optical phonons. The effect is demonstrated in p-i-n semiconductor nanostructures by suing subpicosecond Raman spectroscopy. We suggest that the observed phenomena will have enormous impact on the carrier dynamics in nanoscale semiconductor devices.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Liang, Kong-Thon F. Tsen, Otto F. Sankey, Sergiy Mikhailovich Komirenko, Ki Wook Kim, Viatcheslav A. Kochelap, Meng-Chyi Wu, Chong-Long Ho, Wen-Jeng Ho, and Hadis Morkoc "Observation of field-induced optical phonon amplification in semiconductor nanostructures", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.479278
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KEYWORDS
Phonons

Electrons

Nanostructures

Semiconductors

Gallium arsenide

Raman scattering

Carrier dynamics

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