Operating modes of the Auger-transistor and the photo-field detectors under strong electric field

V. D. Kalganov; N. V. Mileshkina; E. V. Ostroumova

doi:10.1117/12.514261

11 June 2003 Operating modes of the Auger-transistor and the photo-field detectors under strong electric field

V. D. Kalganov, N. V. Mileshkina, E. V. Ostroumova

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514261
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Conditions for appearance of a self-consistent quantum well in both the near-surface region of a vacuum semi-conductor field-emitter and a case of metal-insulator-semiconductor heterostructures (Auger-transistor) under strong electric field have been studied.

Citation Download Citation

V. D. Kalganov, N. V. Mileshkina, and E. V. Ostroumova "Operating modes of the Auger-transistor and the photo-field detectors under strong electric field", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514261

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