Intel benchmarking and process integration of 157-nm resists

James M. Powers; Jeanette M. Roberts; Paul A. Zimmerman; Robert P. Meagley; E. Steve Putna; Uday Shah

doi:10.1117/12.483730

12 June 2003 Intel benchmarking and process integration of 157-nm resists

James M. Powers, Jeanette M. Roberts, Paul A. Zimmerman, Robert P. Meagley, E. Steve Putna, Uday Shah

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.483730
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Intel’s recent 157nm fluoropolymer photoresist development is described, including the benchmarking of photoresist patterning and the suitability of resists in typical Intel etch processes. The imaging results show that the new ultra-low absorbance resists (absorbance <1/μm) show great promise for meeting the 65nm-node ITRS targets. The materials also show good etch resistance when exposed to SiO₂, Si₃N₄ and Si_xO_yN_z dry etch chemistries.

Citation Download Citation

James M. Powers, Jeanette M. Roberts, Paul A. Zimmerman, Robert P. Meagley, E. Steve Putna, and Uday Shah "Intel benchmarking and process integration of 157-nm resists", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.483730

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