Paper
12 June 2003 Performance of imide and methide onium PAGs in 193-nm resist formulations
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Abstract
The performance of a new class of photoacid generators (PAGs) made from the onium salts of bis(perfluoroalkylsulfonyl)imide and tris(perfluoroalkylsulfonyl)methide anions were studied in 193nm formulations. The lithographic properties such as sensitivity, resolution, pattern profiles, footing, I-D bias and PEB sensitivity were investigated in methacrylate and COMA/methacrylate hybrid type matrix resins. In general the iodonium PAGs were about three times slower than the sulfonium PAGs. Methide and imide PAGs possessing similar fluoroalkylgroups showed comparable performance in terms of exposure latitude, I-D bias. And PEB sensitivity. Compared to the reference PAG, the profiles exhibited T-tops and sum. Among the new PAGs studied bis(perfluorobutanesulfonyl)imide exhibited close performance to that of the reference PAG except for the scum. Details on the exposure results of these PAGs in both methacrylate type and COMA/methacrylate hybrid type polymer based 193nm resist formulations are provided.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munirathna Padmanaban, Ralph R. Dammel, SangHo Lee, Woo-Kyu Kim, Takanori Kudo, Douglas S. McKenzie, and Dalil Rahman "Performance of imide and methide onium PAGs in 193-nm resist formulations", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.487738
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Polymers

Lithography

193nm lithography

Argon

Semiconducting wafers

Chemically amplified resists

Diffusion

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