DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods

Waclaw Bala; Roman Rumianowski; Andrzej Korcala; Zygmunt Turlo

doi:10.1117/12.519672

22 October 2003 DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods

Waclaw Bala, Roman Rumianowski, Andrzej Korcala, Zygmunt Turlo

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519672
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

In this paper we report the result of investigation of the electrical transport in PLD grown n-PbSe/n-Si heterojunction by DC and AC current measurement techniques. This characterization method is a well-suited and simple technique to study the interface between two semiconductors. The Si substrates are highly doped (ρ = 0.45 Ωcm), and consequently most of the heterojunction depletion layer falls in the PbSe epilayer. Fabrication of PbSe thin films on Si substrates by the pulsed laser deposition(PLD) method has been demonstrated. The films were characterized by X-ray diffraction analysis.

Citation Download Citation

Waclaw Bala, Roman Rumianowski, Andrzej Korcala, and Zygmunt Turlo "DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519672

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