Paper
15 December 2003 High-efficiency InP-based multijunction solar cells
Y. Gu, J. Yan, M. Raj, Fow-Sen Choa, G. V. Jagannathan, Sudhir B. Trivedi, J. Feng
Author Affiliations +
Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543329
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada
Abstract
In this work, we study a high efficient four-junction solar cells using AlAsSb(1.91eV), AlInAs(1.46eV), ALGaInAs(1.0eV) and InGaAs(0.75eV) materials. The >35% efficiency is calculated under AM0, and the thickness of each layer is adjusted to equalize the short circuit current. We also experimentally fabricated a 1.0eV cell and studied its characteristics.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Gu, J. Yan, M. Raj, Fow-Sen Choa, G. V. Jagannathan, Sudhir B. Trivedi, and J. Feng "High-efficiency InP-based multijunction solar cells", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543329
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Cited by 1 scholarly publication.
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KEYWORDS
Solar cells

Multijunction solar cells

Indium gallium arsenide

Resistance

Doping

Metalorganic chemical vapor deposition

Silicon

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